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| SMD Type HEXFET Power MOSFET KRF7205(IRF7205) Features Adavanced Process Technology Ultra Low On-Resistance P-Channel MOSFET Surface Mount Dynamic dv/dt Rating Fast Switching MOSFET IC Absolute Maximum Ratings Ta = 25 Parameter Continuous Drain Current, VGS @ 10V @ TA = 25 Continuous Drain Current, VGS @ 10V @ TA = 70 Pulsed Drain Current *1 Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt *2 Maximum Junction-to-Ambient *3 Junction and Storage Temperature Range VGS dv/dt R JA Symbol ID ID IDM Rating -4.6 -3.7 -15 2.5 0.02 20 -3 50 -55 to + 150 Unit A @TC = 25 PD W V V V/ns /W TJ, TSTG *1 Repetitive rating; pulse width limited by max. junction temperature. *2 ISD -4.6A, di/dt 90A/ s, VDD V(BR)DSS,TJ 10sec. 150 *3 Surface mounted on FR-4 board, t www.kexin.com.cn 1 SMD Type KRF7205(IRF7205) Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Internal Drain Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Continuous Source Current Body Diode) Pulsed Source Current Diode Forward Voltage *1 Pulse width 300 s; duty cycle 2%. Body Diode) *2 Qg Qgs Qgd td(on) tr td(off) tf LS LD Ciss Coss Crss trr Qrr ton IS ISM VSD TJ = 25 , IS = -1.25A, VGS = 0V*1 VGS = 0V VDS = -10V f = 1.0MHz TJ = 25 , IF =-4.6A s*1 Symbol VDSS RDS(on) VGS(th) gfs IDSS Testconditons VGS = 0V, ID = -250A VGS = -10V, ID = -4.6A*1 VGS = -4.5V, ID = -2.0A*1 VDS = VGS, ID = -250 A -1.0 6.6 Min -30 IC MOSFET Typ Max Unit V 0.070 0.130 -3.0 V S -1.0 -5.0 -100 100 27 5.2 7.5 14 21 97 30 60 150 100 ns 40 nC nA A VDS = -15V, ID = -4.6A*1 VDS = -24V, VGS = 0V VDS = -16V, VGS = 0V, TJ = 70 IGSS VGS = -20V VGS = 20V ID = -4.6A VDS = -15V VGS = -10V,*1 VDD = -15V ID = -1.0A RG = 6.0 RD = 10 *1 71 2.5 nH 4.0 870 720 220 70 100 100 180 ns nC pF di/dt = 100A/ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) -2.5 A -15 -1.2 V *2 Repetitive rating; pulse width limited bymax 2 www.kexin.com.cn |
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